c_QED analytics - Materials & Circuit elements

Superconducting circuit elements

Circuit Element:

Capacitance model used

Frequency model used

Target Mode: Target Frequency, f_01 (GHz): f_01 Uniformity Target (1sigma, %): Resonator Frequency Target, f0 (GHz): Resonator Impedance Target, Z0 (Ohms):

Materials parameters

Superconductor: Substrate: Tunnel Barrier:

Superconductor layer thickness, h_X (nm): Tunnel junction thickness, h_XOx (nm): Barrier Relative Permittivity, eps_r: Effective Permittivity, eps_eff (substrate):

Junction parameters

Junction specific resistivity, JSR (Ohm*um^2, RA):

Device parameters

Two rectangular qubit pads

DP: Pad Edge Length, L (µm): DP: Pad Width, W (µm): DP: Pad Gap, s (µm): DP: Ground Distance, g (µm): Pad capacitance correction, K_pads: Pad to ground plane capacitance correction, K_ground:

Single circular qubit pad to ground

DP: Circular Pad Radius, r (µm): DP: Ground Distance, g (µm): Ground capacitance correction, K_ground:

DP: W, L, s, g (circular mode uses r and g). Uses h_X from Material Parameters.

Lambda/2 coplanar resonator

Gap to Ground Plane, g (µm): Gap to Feedline, d (µm):

L and W are solved from targets (f0 and Z0) using eps_eff and g.

Coupling Capacitance, C_c (F):

Output

Materials MOI's

No additional material outputs in this mode.

Device MOI's

Target R_N:

R_N Spread (implied):

Target JSR (RA) and Spread:

A_JJ:

f_01:

f_01 Spread (1sigma):

E_J/h, E_C/h:

C_pads:

C_ground:

C_JJ:

C_total breakdown:

Coupling Strength: